INVESTIGATION OF COMPLEX INDEX OF REFRACTION OF GALLIUM NITRIDE GaN

Abstract

An understanding of the complex index of refraction of Gallium Nitride (GaN) is important because of the increasing application of GaN in many high frequency, optical and electronics devices. Complex index of refraction of Gallium Nitride (GaN)have been investigated theoretically by means of Kramers and Kronig method in the photon energy range 2.0 – 10.0eV. We obtained refractive index which has a maximum value of 2.89 at photon energy 7.0eV, the extinction coefficient which has a maximum value of 1.17 at photon energy 7.0eV, the dielectric constant, the real part of the complex dielectric constant has a maximum value of 7.0 at photon energy 7.0eV and the imaginary part of the complex dielectric constant has a maximum value of 6.79 at photon energy 7.0eV, the transmittance which has a maximum value of 0.18 at photon energy 7.0eV, the absorption coefficient which has a maximum value of 86.18 at photon energy 7.0eV. The values obtained for complex index of refraction ofGaN are essentially important for emerging GaN applications such ashigh-power and high-frequency devices, solar cell arrays for satellites, communications and optoelectronics devices.