OPTICAL PROPERTIES OF ZINC SULPHIDE (ZnS)
DOI:
https://doi.org/10.51406/jnset.v12i1.1265Keywords:
Complex Index of Refraction, Extinction Coefficient, Dielectric Constant, Transmittance, Absorption Coefficient, Reflectance, SemiconductorAbstract
Optical properties of Zinc Sulphide (ZnS) have been investigated by means of Kramers Kronig method. Optical properties such as refractive index, extinction coefficient, dielectric constant, transmittance, absorption coefficient, reflectance, reflection coefficient and optical conductivity are presented in the energy range 0.60 – 6.01eV. The calculated optical properties of ZnS indicate that it has promising applications in the fabrication of optoelectronic devices such as phosphors and catalysts, laser, sensor, infrared windows, the cathode ray tube, solar cells, blue light-emitting diodes, electro-optic modulators, electroluminescence device applications and Light emitting diodes (LED).
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Antony A, Mirdi K. V, Manoj R, Jayaraj M. K. 2005. The effect of the pH value on the growth
and properties of chemical-bath-deposited ZnS thin films, Mater Chem Phys 90, 106-110.
Bakr N. A, Funde A. M, Waman V. S, Kamble M. M, Hawaldar R. R, Amalnerkar D. P,
Gosavi S. W, Jadkar S. R. 2011. Determination of the optical parameters of a-Si:H thin films
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CdSe nanoparticles as measured by time-resolved terahertz spectroscopy, Nano Lett 2. 983
Bloss W. H, Pfisterer F, Schock H. W. 1988. “Advances in Solar Energy, An
Annual Review of Research and Development†Amer. Solar Energy Soc. Ic,, New York, 4. 275
Bredol M., Merichi J. 1998. ZnS precipitation: morphology control. J Material Sci. 33: 471
Calandra P, Goffredi M, Liveri V. T. 1999. Study of the growth of ZnS in water/AOT/n-Heptane microemulsions by UV absorption spectroscopy, Colloids Surf A9. 160
Coe S, Woo W. K, Bawendi M. G, Bulovic V. 2002. Electroluminescence from single monolayers of nanocrystals in molecular organic devices, Nature 420. 800-803.
Ennaoui A, Eisele W, Lux-Steiner M, Niesen T. P, Karg F. 2003. Highly efficient Cu (Ga, In)(S,Se)2 thin film solar cells with zinc-compound buffer layers, Thin Solid Films 431-432. 335-339.
Fox M. 2001. Optical Properties of Solids, Oxford University Press, New York, USA, ISBN-13:9780198506126, 305
Goswami A. 2005. Thin Film Fundamentals, New Age International, New Delhi, India.
Hu C and White R. M. 1983. “Solar Cells from Basic to Advance Systemâ€, McGraw
Hill Inc, New York, 207
Kim S. Y. 1996. Effect of anneling on the optical properties of ZnS thin films, App. Opt 35 (34)
Klimov V. I, Mikhailovsky A. A, Xu S, Malko A, Hollingsworth J. A, Leatherdale C. A, Eisler H. J, Bavendi M. G. 2000. Optical gain and stimulated emission in nanocrystal quantum dots,
Science 290. 314
Marquerdt E, Optiz B, Scholl M, Henker M. 1994. Effect of anneling on the optical properties of ZnS films, J Appl Phys 75. 8022
Memon A and Tanner D. B. 1985. Far-infrared dielectric function of zincblende ZnS, Phys Sta. So. (b) 128(1), 49-52
Nadeem M. Y and Ahmed W. 2000. Optical properties of ZnS thin films, Turk J Phys 24. 651-659
Ndukwe I. C. 1996. Solution growth, characterization and applications of zinc sulphide thin films, Solar Energy Materials and Solar Cells. 40. 123
Ozutok F, Erturk K, Bilgiat V. 2012. Growth, electrical and optical study of ZnS:Mn thin films, Acta Physica Polonica A 121, 221
Pankove J. I. 1971. Optical Processes in Semiconductors, Prentice-Hall, New Jersey, 88
Polster H. D. 1952. Optical properties of ZnS films, J Opt Soc America 42. 21
Raffaelle R. P, Castro S. L, Hepp A. F, Bailey S. G. 2002. Quantum dot solar cells, Prog hotovoltaics 10, 433
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Saeed N. M. 2011. Structural and optical properties of ZnS thin films prepared by spray pyrolysis technique, Journal of Al-Nahrain University (Science) 14 (2), 86
Schubert E. F. 2004. Refractive index and extinction coefficient of materials.
http://homepages.rpi.edu/~schubert/Educational-resources/Materials-Refractive-index-and-extinction-coefficient.pdf
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Sooklal K, Cullumn B. S, Angel S. M, Murphy C. J. 1996. Photophysical properties of ZnS nanoclusters with spatially localized Mn2+ , J Phys Chem 100. 4551-4555.
Sturge M. D. 1962. Optical absorption of gallium arsenide between 0.6 and 2.75eV. Phys Rev 127, 768
Swanepoel R.1983. Determination of the thickness and optical constants of amorphous silicon. J Phys E: Sci Instrum 16. 1214
Thakur A and Fradin C. 2005. Characterization of quantum dot behaviour in lve mammalian cells, Can Undergraduate Phys. J.3. 7-12
Thamizhmani L, Azad A. K, Dai J, Zhang W. 2005. Far-infrared optical and dielectric response of ZnS measured by terahertz time-domain spectroscopy, Applied Physics Letters 86. 131111
Uzar N, Arikan M. C. 2011. Synthesis and investigation of optical properties of ZnS
nanostructures, Bull Mater Sci 34 (2). 287
Vacassy R., Scholz S. M., Dutta J., Hofmann H., Plummer C. J. G., Carrot G, Hilborn J., Akine M. 1998. Nanostructure zinc sulphide phosphors, Mater Res Soc Symp Proc 501. 369
Wada T, Hashimoto Y, Nishiwaki S, Satoh T, Hayashi S, Negani T. 2001. High efficiency CIGS solar cells with modified CIGS surface, Solar Energy Mater Solar Cells 67, 305-310
Yamamoto T, Kishimoto S, Iida S. Control of valence states for ZnS by triple-codoping method, 2001. Physica B 308-310. 916
Yu P. Y, Cardona M. 1996 Fundamentals of Semiconductors. Springer-Verlag, Berlin, Germany.
Zhu Y. C, Bondo Y, Xue D. F. 2003. Spontaneous growth and luminescence of zinc sulfide nanobelts, Appl Phys Lett 82, 1769
